Process for preparing finely-divided silicon dioxide in good yie

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing

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423337, C01B 33182

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045728275

ABSTRACT:
Process and apparatus are provided for preparing finely-divided silicon dioxide in good yield by reaction of silicon fluoride in the vapor phase with water vapor, combustible gas and free oxygen-containing gas in a flame reaction zone to form hydrogen fluoride and silicon dioxide entrained in a gaseous reaction mixture; withdrawing the gaseous reaction mixture from the flame reaction zone; and then immediately and rapidly cooling the gaseous reaction mixture and entrained silicon dioxide to a temperature below 700.degree. C. by passing the gaseous reaction mixture in a turbulent flow at a Reynolds number above 300 under constraint through a straight narrow passage in alignment with the gas flow, the passage having a diameter within the range from about 20 to about 150 mm and smooth walls constituting a cooling surface.

REFERENCES:
patent: 3645684 (1972-02-01), De Cuir
patent: 4036938 (1977-07-01), Reed

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