Process for preparing epitaxial compound semiconductor

Details Process for preparing epitaxial compound semiconductor Process for preparing epitaxial compound semiconductor

1990-03-31

1992-03-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437107, 148DIG48, 148DIG94, H01L 21203

Patent

active

051008327

ABSTRACT:
A process for preparing a doped epitaxial compound semiconductor on a substrate by molecular beam epitaxy, the molecular beam epitaxy being effected under the irradiation of the substrate surface with a specific electromagnetic radiation.

REFERENCES:
patent: 4071383 (1978-01-01), Nagata
patent: 4086108 (1978-04-01), Gonda
patent: 4664940 (1987-05-01), Bensoussan et al.
patent: 4693207 (1987-09-01), Hayakawa et al.
patent: 4855255 (1989-08-01), Goodhue
Bicknell et al., "P-Type CdTe Epilayers grown by Photoassisted Molecular Beam Epitaxy", Appl. Phys. Lett., 49(25), Dec. 22, 1986, pp. 1735-7.
Myers et al., ". . . HgCdTe Films . . . grown by Photoassisted Molecular-Beam Epitaxy", J. Vac. Sci. Technol. A 7(2), Mar./Apr. 1989, pp. 300-304.
Tu et al., "Laser-Modified Molecular Beam Epitaxial Growth of (A1)GaAs on GaAs . . . ," Appl. Phys. Lett. 52(12), Mar. 21, 1988, pp. 966-968.
Giles et al., "Properties of Doped II-VI Films . . . grown by Photoassisted Molecular Beam Epitaxy," J. Crys. Growth, 86 (1988), pp. 348-353.

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