Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Patent
1996-10-17
1999-05-18
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
117 2, 117 4, 117 6, 117944, 505501, C30B1/10
Patent
active
059047666
ABSTRACT:
Provided is a process for preparing a bismuth compound at a heat treatment temperature lower than conventional. A bismuth compound is prepared by the steps of heating under vacuum to form a reduced phase and heating under oxidizing environment of normal or lower pressure.
REFERENCES:
patent: 5236889 (1993-08-01), Sugihara et al.
patent: 5639714 (1997-06-01), Hikata et al.
patent: 5661114 (1997-08-01), Otto et al.
patent: 5703021 (1997-12-01), ven Schnering et al.
patent: 5798318 (1998-08-01), Li et al.
Ami Takaaki
Hironaka Katsuyuki
Machida Akio
Watanabe Koji
Kunemund Robert
Sony Corporation
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