Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Patent
1992-10-08
1994-11-22
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
117 80, 117949, C30B 2932
Patent
active
053665830
ABSTRACT:
A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixture is heated to a predetermined temperature to make a melt. Then, a seed crystal of BaTiO.sub.3 is brought into contact with the melt under an environment with a low oxygen partial pressure of 0.02 atm. or less. From this state, the above melt is slowly cooled to grow a single crystal on the seed crystal. The thus obtained single crystal is heated in a temperature of 600 .degree. C. or more, under an oxidizing environment with its oxygen partial pressure more than 0.1 atm.
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Kitayama, Japan Society of Applied Physics, Crystal Engineering Section, the test for the 95th Study Meeting (1991), pp. 13-17.
Hlasivcova et al., "A Contribution to the Determination of the Deviation from the Oxygen Stoichiometry of Barium Titanate Single Crystals", Kristall Und Technik, vol. 6, No. 1, 1971, Berlin DD, pp. K11-K15, month unknown.
Ajimura Shoji
Kurosaka Akihito
Nakao Osamu
Tominaga Haruo
Tomomatu Kazuhiko
Fujikura Ltd.
Kunemund Robert
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