Process for preparing an X-ray mask structure

Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition

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427 65, 4272481, 427258, 427259, 427264, 427265, 427270, 427272, 427282, 427402, 4274197, C23C 800

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056077335

ABSTRACT:
A process for preparing an X-ray mask structure comprises an X-ray transmissive film, an X-ray absorptive member held on the X-ray transmissive film and supporting frame for supporting the X-ray transmissive film. The X-ray absorptive member is constituted of crystalline grains having a grain boundary size of 1 .mu.m or larger, or has a density of 90% or more relative to the density of the bulk material.

REFERENCES:
patent: 4515876 (1985-05-01), Yoshihara et al.
patent: 4728591 (1988-03-01), Clark et al.
Patent Abstracts of Japan, vol. 11, No. 382 (E-564) Dec. 12, 1987 & JP-A-62 147 730 (Mitsubishi Electric Corp. ) Jul. 1, 1987.
Patent Abstracts of Japan, vol. 15, No. 213 (E-1073) May 30, 1991 & JP-A-30 60 112 (Nippon Telegraph & Telephone Corp.) Mar. 15, 1991.
M. Itoh et al., "The origin of stress in sputter-deposited tungsten films for x-ray masks", Journal of Vacuum Science and Technology B; vol. 9, No. 1, Jan./Feb. 1991, pp. 149-153, New York, US.
R.F. Bunshah et al., Deposition Technologies for Films and Coatings, Noyes Publication, New Jersey, pp. 289, 296, 297, 300 and 301. (No Date Avail).
S. Wolf and R. Taubes, Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, CA, pp. 47-48 (1986). (No Month Avail.).

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