Process for preparing a substrate for MOS devices of different t

Details Process for preparing a substrate for MOS devices of different t Process for preparing a substrate for MOS devices of different t

1976-06-25

1977-10-04

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29571, 148187, 357 23, 357 41, 357 42, 357 91, H01L 21265, H01L 2978

Patent

active

040522296

ABSTRACT:
In a substrate, a process for forming a plurality of host regions of different conductivity types and dopant concentration levels. These various host regions include the channels of MOS field-effect devices, thereby providing devices of different voltage thresholds. Overlapping masking and doping provides numerous host regions with a minimum of masking.

REFERENCES:
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3731372 (1973-05-01), Kraft
patent: 3756861 (1973-09-01), Payne et al.
patent: 3775191 (1973-11-01), McQuhae
patent: 3898105 (1975-08-01), Mai et al.
patent: 3916430 (1975-10-01), Heuner et al.
patent: 3928082 (1975-12-01), Schwettmann
patent: 3959040 (1976-05-01), Robertson

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