Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-11-14
1993-05-11
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505732, 505730, 427 62, 427314, 427584, B05D 306, B05D 512
Patent
active
052100707
ABSTRACT:
A process of preparing a superconducting thin oxide film includes irradiating a target containing Bi, Sr, Ca and Cu with a laser beam to prepare a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x oxide or a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.y oxide on a substrate. The process is characterized in that the target containing Bi, Sr, Ca and Cu in an atomic ratio of 2:2:2:3 is positioned to face the substrate, and the laser beam is irradiated to the target in an atmosphere having an oxygen partial pressure of 0.01-1 Torr while the temperature of the substrate is maintained in a given temperature range suitable for growing the respective superconducting thin oxide films.
REFERENCES:
Applied Physics Letters, vol. 55, No. 20, Nov. 13, 1989, pp. 2123-2125, New York, US; Ivanov Z. et al: "Superconducting (Bi,Pb)-Ca-Sr-Cu-O Thin Films Prepared in Situ by Laser Ablation".
Applied Physics Letters, vol. 51, No. 8, Aug. 24, 1987, pp. 619-621, New York, US; D. Dijkkamp et al: "Preparation of Y-Ba-Cu Oxide Superconductor Thin Films Using Pulsed Laser Evaporation From High Tc Bulk Material".
Physica C, vol. 170, No. 5, Oct. 1, 1990, pp. 545-551, Amsterdam, NL; Brousse T., et al: "Laser Ablated Bismuth Cuprate Thin Films. Preparation and Effect of Oxygen Nonstochiometry Upon Superconductivity".
Ohya et al., "C-Axis Lattice Spacing Control of As-Grown Bi -Sr-Ca-Cu-O Thin Films by Single-Target Excimer Laser Ablation", Jpn. J. Appl. Phys. 28(6) Jun. 1989 pp. L978-L980.
Krebs et al., "Conditions for oriented growth of Y-Ba-Cu -O and Bi-Sr-Ca-Cu-O films by pulsed laser ablation", J. Appl. Phys. 69(4) Feb. 1991 pp. 2405-2409.
Hattori Hisao
Itozaki Hideo
Nagaishi Tatsuoki
Beck Shrive
King Roy V.
Sumitomo Electric Industries Ltd.
LandOfFree
Process for preparing a single phase Bi-containing superconducti does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for preparing a single phase Bi-containing superconducti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for preparing a single phase Bi-containing superconducti will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1350005