Process for preparing a silicon nitride insulating film for semi

Details Process for preparing a silicon nitride insulating film for semi Process for preparing a silicon nitride insulating film for semi

1989-12-05

1991-05-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437242, 437919, 142DIG14, 142DIG114, H01L 21283, H01L 2131, H01L 21311

Patent

active

050136925

ABSTRACT:
A process for preparing an insulating film for semiconductor memory device which comprises forming a silicon nitride film over a substrate by a CVD technique, oxidizing the surface of the silicon nitride film to form a silicon oxide layer over the film, and removing the silicon oxide layer by etching to form an improved silicon nitride film, which is suitably used for the formation of a capacitor of highly integrated memory device.

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