Process for preparing a silicon carbide sintered body for use in

Details Process for preparing a silicon carbide sintered body for use in Process for preparing a silicon carbide sintered body for use in

1994-01-18

1996-12-31

Fiorilla, Christopher A.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 60, 264 66, 423345, 427228, 427399, 501 88, 501 89, C04B 3554, C04B 3556

Patent

active

055891160

ABSTRACT:
A process for the preparation of a silicon carbide sintered body of high purity which has a content of 1 ppm or less of each atom harmful to the manufacture of semiconductor equipment including the step of shaping a silicon carbide powder, calcining the shaped body in a non-oxidizing atmosphere to form a porous body, and subjecting the porous body to reaction sintering while being impregnated with molten metallic silicon. The starting silicon carbide powder also has a content of 1 ppm or less of each harmful atom and it has a free carbon content of not greater than 20% by weight and an average particle diameter of 0.5-20 .mu.m. Such silicon carbide powder can be prepared from a carbon- and silicon-containing starting mixture including at least one liquid hydrolyzable silicon compound and at least one carbonaceous material selected from polymerizable or cross-linkable organic compounds prepared in the presence of a catalyst which is substantially free from harmful atoms by solidifying the starting mixture and heating it so as to react and form silicon carbide.

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