Process for preparing a polycrystalline semiconductor thin film

Details Process for preparing a polycrystalline semiconductor thin film Process for preparing a polycrystalline semiconductor thin film

1991-05-10

1994-04-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 437908, 437907, 148DIG91, H01L 21265

Patent

active

053066510

ABSTRACT:
A process for preparing a polycrystalline semiconductor thin film transistor wherein a non-singlecrystalline semiconductor formed on a transparent insulating substrate is annealed by laser beams, such process comprising forming a gate insulation layer and a gate electrode on the non-singlecrystalline semiconductor; implanting impurity ions into a source-drain region of the semiconductor wherein the gate electrode is used as a mask, and irradiating laser beams from the rear surface side of the transparent insulating substrate to thereby polycrystallize the non-singlecrystalline semiconductor under the gate electrode or improve the crystallinity of the semiconductor without causing the non-singlecrystalline semiconductor in a completely molten state.

REFERENCES:
patent: 4545823 (1985-10-01), Drowley
T. Sameshima & S. Usui "XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs" Mat Res Soc Symp Proc vol. 71 (1986) pp. 435-440.
Applied Physics Letters, vol. 40, No. 26, pp. 469-471, Mar. 15, 1982, R. A. Lemons, et al., "Laser Crystallization of Si Films on Glass".
Electronics Letters, vol. 15, No. 25, pp. 827-828, Dec. 6, 1979, S. Iwamatsu, et al., "Silicon-On-Sapphire M.O.S.F.E.T.S Fabricated by Back-Surface Laser-Anneal Technology".
IEEE Transactions of Electron Devices, vol. 36, No. 12, pp. 2868-2872, Dec., 1989, K. Sera, et al., "High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film".
Fujitsu-Scientific and Technical Journal, vol. 23, No. 2, pp. 71-86, Jun., 1987, M. Nakano, "Three-Dimensional ICs at Fujitsu".

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