Process for preparing a layered superconducting structure

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se

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505473, 505475, 505702, 505731, 505732, 505236, 505238, 427 62, 4274193, H01L 3924, B05D 512

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056292686

ABSTRACT:
A process for depositing successively a plurality of thin films on a bottom superconductor layer made of oxide superconductor deposited on a substrate in a single chamber under a condition, the bottom superconductor layer is heated in ultra-high vacuum at a temperature which is lower than the oxygen-trap temperature (T.sub.trap) at which oxygen enter into the oxide superconductor but higher than a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap -100.degree. C.) and then the first thin film is deposited thereon.

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Harris et al, Solid State Communications, vol. 67, No. 4 1988, pp. 359-362.
Sobolewski et al, "Cleaning Of YBa.sub.2 Cu.sub.3 O.sub.7-x surfaces by thermal Oxidation Treatments", AIP No. 200 (Boston, MA) 1989 pp. 197-204.
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Rogers et al, "Fabrication of heteroepitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x --PrBa.sub.2 Cu.sub.3 O.sub.7-x --YBa.sub.2 Cu.sub.3 O.sub.7-x Josephson device grown by laser deposition", Appl. Phys. lett. 55(19) Nov. 1989 pp. 2032-2034.
Mizuno et al, "Fabrication of thin-film-type Josephson junctions using a B.sub.i --S.sub.r --C.sub.a --C.sub.u --O/B.sub.i --S.sub.r C.sub.u --O/B.sub.i --S.sub.r --C.sub.a --C.sub.u --O structure," Appl. Phys. lett. 56(15) Apr., 1990, pp. 1469-1471.
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