Process for preparing a layered structure containing at least on

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Heating – annealing – or sintering

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505329, 505330, 505742, 427 62, 4274192, 4274193, H01L 3924

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055344917

ABSTRACT:
A process for producing a layered structure containing at least one thin film of oxide superconductor (1) such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x having a contaminated surface on a substrate (3). The contaminated surface of the thin film of oxide superconductor is heat-treated in an atmosphere containing oxygen of high purity of higher than 5N and a partial pressure of 25 Torr at a temperature of 350.degree. to 700.degree. C. On the thin film of oxide superconductor (1), another thin film (2) of oxide superconductor or non-superconductor is deposited.
The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.

REFERENCES:
patent: 5061687 (1991-10-01), Takada et al.
Kwo et al, "Observations of quasi-particle tunneling and Josephson behavior in YlBa2Cu307-x
ative barrier/PB thin film junctions", Applied Physics Letters, vol. 56, No. 8, 19 Feb. 1990, pp. 788-790.
Gurvitch et al, "Preparation and substrate reactions of superconducting Y-Ba-Cu-O films", Applied Physics Letters, vol. 51, No. 13, 28 Sep. 1987, pp. 1027-1029.
Pargellis et al, "All-high Tc Josephson tunnel junction: Bal-xKxB103/Ba 1-xKxBi03 junctions", Applied Physics Letters, vol. 58, No. 1, 7 Jan. 1991, pp. 95-96.
Sobolewski et al, "Cleaning of YBa.sub.2 Cu.sub.3 O.sub.7-x surfaces by thermal oxidation treatments", AIP No. 200 (Boston, MA) 1989 pp. 197-204.
Kirlyakov et al, Superconductivity 3(6), Jun. 1990, pp. 1057-1064.

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