Process for preparing a functional thin film by way of the chemi

Details Process for preparing a functional thin film by way of the chemi Process for preparing a functional thin film by way of the chemi

1993-04-15

1993-12-14

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

427562, 427563, C23C 1648, C23C 1650

Patent

active

052698483

ABSTRACT:
An apparatus for forming a functional silicon- or germanium-containing amorphous deposited film on a substrate which comprises a film-forming chamber having a film-forming space, a substrate holder and an electric heater for positioning the substrate in the film-forming chamber, an exhaust pipe in fluid communication with the film-forming chamber, a first gas-introducing portion for providing an active species (H), having an activation space for generating the active species (H), a microwave discharge supply source and a passage for providing a gaseous hydrogen-containing material into the activation space in order to produce the active species (H), a second gas-introducing portion for providing a gaseous silicon-or germanium-containing material (X), capable of reacting with the active species (H) to form a reaction product (HX) that is capable of forming the functional deposited film on the substrate, and a transportation path having a mixing space and a second microwave discharge energy supply source for promoting reaction with the active species.

REFERENCES:
patent: 3517643 (1970-06-01), Goldstein
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 4051382 (1977-09-01), Ogawa
patent: 4262631 (1981-04-01), Kubacki
patent: 4522674 (1985-06-01), Ninomiya
patent: 4554180 (1985-11-01), Hirooka
patent: 4687544 (1987-08-01), Bersin
patent: 4689093 (1987-08-01), Ishihara
patent: 4835005 (1989-05-01), Hirooka
patent: 4849249 (1989-07-01), Ishihara
patent: 5002793 (1991-03-01), Arai

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