Process for preparing a bonding type semiconductor substrate

Details Process for preparing a bonding type semiconductor substrate Process for preparing a bonding type semiconductor substrate

2007-05-15

2007-05-15

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE21123

Reexamination Certificate

active

10961066

ABSTRACT:
The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1−yAly)1−xP on a GaAs substrate12to form an epi-wafer having an n-type cladding layer14(0.45<x<0.50, 0≦y≦1), an active layer15, a p-type cladding layer16and a cover layer17; a step of removing the cover layer17by etching to expose the surface of the p-type cladding layer16; a step of integrally joining a mirror-finished GaP substrate11on the p-type cladding layer16by placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer16; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate12to expose the n-type cladding layer14; and a step of forming electrodes19on the surface of the n-type cladding layer14and on the back surface of the GaP substrate11, respectively.

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