Process for preparation of water-free oxide material

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing

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423339, 423263, 423592, 423593, 423600, 423608, 423610, 423618, 423625, 423630, 65 33, 501 53, C01B 3318, C01G 1702, C01G 23047, C01G 2502

Patent

active

044629745

ABSTRACT:
The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength range. In one process a water-free oxide is prepared by reacting a chosen organic compound containing oxygen bonded to an atom of the metal or non-metal, with a chosen organic acid anhydride to form an intermediate product which is then decomposed to form the desired oxide and to simultaneously regenerate the organic acid anhydride. The regenerated organic acid anhydride reacts with and removes traces of water and water-derived impurities during the formation of the desired oxide and prevents the inclusion of these impurities in the oxide as formed.

REFERENCES:
patent: 2904713 (1959-09-01), Heraeus et al.
patent: 3275408 (1966-09-01), Winterburn
patent: 3535890 (1970-10-01), Hansen et al.
patent: 4315832 (1982-02-01), Pastor et al.

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