Process for preparation of water-free oxide material

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing

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423335, 423263, 423592, 423593, 423600, 423618, 423625, 423630, 501 53, 65 33, 423608, 423610, C01B 3318, C01G 1702

Patent

active

044656564

ABSTRACT:
The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength range. In one process, a water-free oxide is prepared by reacting a chosen nonpolar compound containing the desired metal or non-metal with an aprotic oxygen-containing compound to form the oxide as a precipitate in a chosen aprotic nonaqueous liquid solvent which provides a water-free environment during the formation of the oxide, to prevent the inclusion of water and water-derived impurities in the oxide as formed. Then the oxide-containing precipitate is subjected to a reactive atmosphere process by exposing the powder to a chosen gas phase reactive atmosphere comprising atomic halogen at a predetermined elevated temperature for a predetermined period of time, to remove traces of water and water-derived impurities from the oxide.

REFERENCES:
patent: 2904713 (1959-09-01), Herasus et al.
patent: 3275408 (1966-09-01), Winterburn
patent: 3535890 (1970-10-01), Hansen et al.
patent: 4315832 (1982-02-01), Pastor et al.

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