Process for preparation of polycrystalline silicon

Details Process for preparation of polycrystalline silicon Process for preparation of polycrystalline silicon

2006-04-25

2006-04-25

Johnson, Edward M. (Department: 1754)

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C423S342000

Reexamination Certificate

active

07033561

ABSTRACT:
A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6—nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.

REFERENCES:
patent: 3011877 (1961-12-01), Schweickert et al.
patent: 3147141 (1964-09-01), Ishizuka et al.
patent: 3809571 (1974-05-01), Berlat et al.
patent: 3933985 (1976-01-01), Rodgers
patent: 4150168 (1979-04-01), Yatsurugi et al.
patent: 4179530 (1979-12-01), Koppl et al.
patent: 4217334 (1980-08-01), Weigert et al.
patent: 4311545 (1982-01-01), Bugl et al.
patent: 4526769 (1985-07-01), Ingle et al.
patent: 4851297 (1989-07-01), Allen et al.
patent: 5118486 (1992-06-01), Burgie et al.
patent: 5422088 (1995-06-01), Burgie et al.
patent: 5906799 (1999-05-01), Burgie et al.
patent: 0294047 (1988-12-01), None
patent: 2523113 (1982-03-01), None
patent: H01-188414 (1989-07-01), None
patent: 02-519080 (1989-09-01), None
patent: H09-263504 (1997-07-01), None
patent: 11-049508 (1999-02-01), None
patent: 11-049509 (1999-02-01), None
JP 10-316413, Dec. 2, 1998 Japanese Abstract.

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