Process for polishing a semiconductor substrate

Details Process for polishing a semiconductor substrate Process for polishing a semiconductor substrate

1997-02-25

1999-11-16

Simmons, David A.

Metal treatment

Process of modifying or maintaining internal physical...

Processes of coating utilizing a reactive composition which...

134 7, 156153, 438693, 451 36, C23C 800

Patent

active

059850450

ABSTRACT:
A chemical-mechanical polisher (10) includes a mixer section (12) that mixes components of a polishing fluid prior to introducing the polishing fluid into a polishing section (13) of the polisher (10). In one embodiment, components from feed lines (113 and 114) are combined in a manifold (121) and flowed through a static in-line mixer (123) to mix the components to form the polishing fluid. The polishing rate of the polishing fluid is relatively high because the mixing occurs near the point of use. Local concentrations of the components of the polishing fluid near a substrate (134) should be relatively uniform because the polishing fluid is mixed prior to reaching the substrate (134).

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Cook, "Chemical Processes In Glass Polishing;" Journal of Non-Crystalline Solids 120; pp. 152-171, (1990).

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