Process for planarizing surface of a semiconductor device

Details Process for planarizing surface of a semiconductor device Process for planarizing surface of a semiconductor device

1995-01-17

1997-05-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 216 88, 438699, 438759, H01L 21304

Patent

active

056292422

ABSTRACT:
A layer planarizing method for a semiconductor device is provided to attain excellent controllability of a polishing amount to form a uniform and flat layer on a non-uniform wafer in polishing in a wafer surface. According to the method, a first layer is deposited over at least a top portion of a stepped portion formed on a surface of a body, the stepped portion covered with the first layer is covered with a second layer having a higher polishing rate than that of the first layer, and the second layer is polished until the first layer deposited on the top portion of the stepped portion is exposed.

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