Process for planarizing substrates of semiconductor technology

Details Process for planarizing substrates of semiconductor technology Process for planarizing substrates of semiconductor technology

2007-02-20

2007-02-20

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C257SE21219, C257SE21230

Reexamination Certificate

active

10143904

ABSTRACT:
In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instead of as in the prior art the etching medium being applied in drops, the etching medium is applied in a continuous flow with a flow rate of at least 0.4 l/min so that the etching medium covers the entire surface of the semiconductor substrate to be planarized. This technique yields a differentiated etching rate, the etching speed in the area of the fields between the trenches or contact holes being greater than in the area of the trenches themselves, so that as a result the coating applied to the semiconductor substrate is etched away more quickly than in the area of the trenches and finally material remains only in the area of the trenches or contact holes.

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