Process for patterning magnetic films

Details Process for patterning magnetic films Process for patterning magnetic films

1997-12-08

2000-02-15

Koslow, C. Melissa

Etching a substrate: processes

Forming or treating article containing magnetically...

216 37, 216 31, 216 72, 216 74, 216 75, C23F 112

Patent

active

060248858

ABSTRACT:
A process of patterning magnetic multilayer films including the steps of successively depositing a plurality of magnetic multilayer films on a supporting substrate, selectively removing portions of the plurality of magnetic multilayer films using a reactive plasma etch including chlorine gas, and passivating in situ, or an adjacent evacuated chamber, remaining portions of the plurality of magnetic multilayer films, i.e. the memory elements, in a post-etch fluorinated plasma.

REFERENCES:
patent: 4470873 (1984-09-01), Nakamura
patent: 5221424 (1993-06-01), Rhoades
patent: 5607599 (1997-03-01), Ichihara et al.
Jung et al, "Electron Cyclotron Resonance Plasma Etching of Materials for Magneto-Resistive Random Acess memory Applications", Jour. Electr. Matl., vol. 26, No, 11. Nov. 1997.

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