Process for passivation of photoconductive detectors made of Hg

Details Process for passivation of photoconductive detectors made of Hg Process for passivation of photoconductive detectors made of Hg

1984-10-04

1986-11-25

Silverberg, Sam

Metal treatment

Compositions

Heat treating

427 75, C23C 2260

Patent

active

046247157

ABSTRACT:
The present invention relates to a process for passivation of photoconductive detectors constituted by Hg Cd Te, wherein a layer of native oxide is formed on the faces of an Hg Cd Te wafer and it is made to grow, by pure chemical oxidation in an aqueous solution of K.sub.3 Fe(CN).sub.6 and of KOH. An ordinary layer of ZnS is then formed on the oxide layer. The process makes it possible to produce high-performance infrared detectors, simply.

REFERENCES:
patent: 3977018 (1976-08-01), Catagnus
Extended Abstracts, vol. 83, No. 2, Fevrier 1983, Princeton (U.S.) H. H. Strehblow et al.: "Formation and Reduction of Anodic Oxides on HgTe and DdO. 8Te", pp. 576-577.
Applied Physics Letters, vol. 42, No. 9, Mai 1983, New York (U.S.).
E. Bertagnolli: "Effect of Anodic Growth Temperature on Native Oxides of N--(Hg,Cd) Te", pp. 824-826.

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