Process for passivating semiconductor laser structures with seve

Details Process for passivating semiconductor laser structures with seve Process for passivating semiconductor laser structures with seve

1997-05-22

1998-12-22

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

438 26, 372 49, H01S 319

Patent

active

058518495

ABSTRACT:
The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with trench aspect ratios as large as 5. In addition, the passivation produced by this process has excellent environmental stability, and affords protection against air born contaminant induced degradation.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 5440575 (1995-08-01), Chand et al.
S. Wolf, "Silicon Processing for the VLSI Era", Lattice Press, p. 260 (no month given), 1990.

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