Process for oxidizing semiconducting compounds, especially galli

Details Process for oxidizing semiconducting compounds, especially galli Process for oxidizing semiconducting compounds, especially galli

1982-05-28

1984-02-21

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, B05D 306, B05D 314, B05D 512

Patent

active

044330065

ABSTRACT:
In order to provide a semiconductive substrate such as gallium arsenide with an oxide layer, the substrate is positively biased in a plasma reactor in which an oxidizing gas is ionized by radiofrequency excitation while the substrate is heated to an elevated temperature increasing its conductivity. The substrate may be placed for this purpose on a graphite pedestal which is inductively heated from the same radiofrequency source.

REFERENCES:
patent: 4374867 (1983-02-01), Nahory et al.

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