Process for obtaining multi-layer metallization of the back of a

Details Process for obtaining multi-layer metallization of the back of a Process for obtaining multi-layer metallization of the back of a

1993-07-09

1994-08-30

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437192, 437245, 437247, H01L 21283

Patent

active

053427939

ABSTRACT:
The metallization of the back of the semiconductor substrate is obtained by depositing a series of metal layers, after ion implantation of dopant on the interface with the first layer. The step of ion implantation is followed by the deposition of one or more metal layers of the aforesaid series, and then by thermal annealing under vacuum or in an inert atmosphere, at a temperature considerably lower than 500.degree. C. and for a period considerably shorter than 60 minutes.

REFERENCES:
patent: 3934331 (1976-01-01), Sugiyama
patent: 4517226 (1985-05-01), Baldi et al.
patent: 4914054 (1990-04-01), Moriyama et al.
Ishibashi et al., "Study on Formation of Solid-Phase-Epitaxial CoSi.sub.2 Films and Pattering Effects", Extended Abstracts of the 15th Conference on Solid State Devices and Materials, Tokyo, 1983, pp. 11-14, 2419 Japanese Journal of Applied Physics Supplements.
Palladium Silicide Contact Resistance Stabilization By Ion Implantation; W. Rausch et al; IBM Technical Disclosure Bulletin; vol. 24 No. 7A Dec. 1981; IBM Corp. 1981, p. 3453.

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