Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state
Reexamination Certificate
2003-12-11
2010-10-12
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
C117S081000, C117S083000, C117S068000, C117S073000, C117S074000, C117S076000, C117S077000, C117S078000, C117S952000
Reexamination Certificate
active
07811380
ABSTRACT:
A process for obtaining bulk mono-crystalline gallium-containing nitride, liminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed. According to the invention, the process for obtaining of mono-crystalline gallium-containing nitride from the gallium-containing feedstock in a supercritical ammonia-containing solvent with mineralizer addition is characterized in that the feedstock is in the form of metallic gallium and the mineralizer is in the form of elements of Group I and/or their mixtures, and/or their compounds, especially those containing nitrogen and/or hydrogen, whereas the ammonia-containing solvent is in the form of the mineralizer and ammonia, there are two temperature zones in each step of the process, and the feedstock is placed in the dissolution zone, and at least one mono-crystalline seed is deposited in the crystallization zone, and following the transition of the solvent to the supercritical state, the process comprises the first step of transition of the feedstock from the metallic form to the polycrystalline gallium-containing nitride, and the second step of crystallization of the gallium-containing nitride through gradual dissolution of the feedstock and selective crystallization of gallium-containing nitride on at least one mono-crystalline seed at the temperature higher than that of the dissolution of the feedstock, while all the vital components of the reaction system (including the feedstock, seeds and mineralizer) invariably remain within the system throughout the whole process, and consequently bulk mono-crystalline gallium-containing nitride is obtained. The invention relates also the the post-treatment (slicing, annealing and washing) of the thus obtained crystals.The improved process and the bulk monocrystals obtained thereby are intended mainly for use in the field of opto-electronics.
REFERENCES:
patent: 5096860 (1992-03-01), Nadkarni
patent: 5147623 (1992-09-01), Eun et al.
patent: 5156581 (1992-10-01), Chow
patent: 5190738 (1993-03-01), Parent
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5456204 (1995-10-01), Dimitrov et al.
patent: 5589153 (1996-12-01), Garces
patent: 5679965 (1997-10-01), Schetzina
patent: 5780876 (1998-07-01), Hata
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 5928421 (1999-07-01), Yuri et al.
patent: 5981980 (1999-11-01), Miyajima et al.
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6051145 (2000-04-01), Griffith et al.
patent: 6067310 (2000-05-01), Hashimoto et al.
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6172382 (2001-01-01), Nagahama
patent: 6177057 (2001-01-01), Purdy
patent: 6177292 (2001-01-01), Hong et al.
patent: 6248607 (2001-06-01), Tsutsui
patent: 6249534 (2001-06-01), Itoh et al.
patent: 6252261 (2001-06-01), Usui
patent: 6258617 (2001-07-01), Nitta et al.
patent: 6265322 (2001-07-01), Anselm et al.
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6303403 (2001-10-01), Sato et al.
patent: 6316785 (2001-11-01), Nunoue et al.
patent: 6329215 (2001-12-01), Porowski et al.
patent: 6355497 (2002-03-01), Romano et al.
patent: 6362496 (2002-03-01), Nanishi et al.
patent: 6372041 (2002-04-01), Cho et al.
patent: 6399500 (2002-06-01), Porowski et al.
patent: 6399966 (2002-06-01), Tsuda
patent: 6423984 (2002-07-01), Kato
patent: 6447604 (2002-09-01), Flynn et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 6468882 (2002-10-01), Motoki
patent: 6475277 (2002-11-01), Hirota et al.
patent: 6488767 (2002-12-01), Xu et al.
patent: 6509651 (2003-01-01), Matsubara
patent: 6531072 (2003-03-01), Suda et al.
patent: 6534795 (2003-03-01), Hori et al.
patent: 6586762 (2003-07-01), Kozaki
patent: 6592663 (2003-07-01), Sarayama et al.
patent: 6593589 (2003-07-01), Osinski et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 6614824 (2003-09-01), Tsuda
patent: 6627552 (2003-09-01), Nishio et al.
patent: 6639925 (2003-10-01), Niwa et al.
patent: 6653663 (2003-11-01), Ishida
patent: 6654225 (2003-11-01), Takayanagi
patent: 6656615 (2003-12-01), Dwilinski et al.
patent: 6677619 (2004-01-01), Nagahama et al.
patent: 6686608 (2004-02-01), Takahira
patent: 6693935 (2004-02-01), Tojo et al.
patent: 6711191 (2004-03-01), Kozaki
patent: 6720586 (2004-04-01), Kidoguchi
patent: 6749819 (2004-06-01), Otsuka et al.
patent: 6858882 (2005-02-01), Tsuda
patent: 6924512 (2005-08-01), Tsuda
patent: 7053413 (2006-05-01), D'Evelyn et al.
patent: 7057211 (2006-06-01), Dwilinski et al.
patent: 7081162 (2006-07-01), Dwilinski et al.
patent: 7097707 (2006-08-01), Xu
patent: 7132730 (2006-11-01), Dwilinski et al.
patent: 7160388 (2007-01-01), Dwilinski et al.
patent: 7252712 (2007-08-01), Dwilinski et al.
patent: 7291544 (2007-11-01), D'Evelyn et al.
patent: 7314517 (2008-01-01), Dwilinski et al.
patent: 7315599 (2008-01-01), Morriss
patent: 7335262 (2008-02-01), Dwilinski et al.
patent: 7364619 (2008-04-01), Dwilinski et al.
patent: 7374615 (2008-05-01), Dwilinski et al.
patent: 7387677 (2008-06-01), Dwilinski et al.
patent: 7410539 (2008-08-01), Dwilinski et al.
patent: 7420261 (2008-09-01), Dwilinski et al.
patent: 7422633 (2008-09-01), Dwilinski et al.
patent: 2001/0008656 (2001-07-01), Tischler et al.
patent: 2001/0015437 (2001-08-01), Ishii et al.
patent: 2001/0022154 (2001-09-01), Cho et al.
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2002/0011599 (2002-01-01), Motoki et al.
patent: 2002/0014631 (2002-02-01), Iwata
patent: 2002/0028564 (2002-03-01), Motoki et al.
patent: 2002/0031153 (2002-03-01), Niwa
patent: 2002/0047113 (2002-04-01), Ohno
patent: 2002/0063258 (2002-05-01), Motoki
patent: 2002/0078881 (2002-06-01), Cuomo
patent: 2002/0189531 (2002-12-01), Dwilinski et al.
patent: 2002/0192507 (2002-12-01), Dwilinski et al.
patent: 2003/0001238 (2003-01-01), Ban
patent: 2003/0003770 (2003-01-01), Morita et al.
patent: 2003/0022028 (2003-01-01), Koike et al.
patent: 2003/0143771 (2003-07-01), Kidoguchi et al.
patent: 2003/0209191 (2003-11-01), Purdy
patent: 2004/0003495 (2004-01-01), Xu
patent: 2004/0031978 (2004-02-01), D'Evelyn et al.
patent: 2004/0089221 (2004-05-01), Dwilinski et al.
patent: 2004/0139912 (2004-07-01), Dwilinski
patent: 2004/0238810 (2004-12-01), Dwilinski et al.
patent: 2004/0244680 (2004-12-01), Dwilinski et al.
patent: 2004/0251471 (2004-12-01), Dwilinski et al.
patent: 2004/0255840 (2004-12-01), Dwilinski et al.
patent: 2004/0261692 (2004-12-01), Dwilinski et al.
patent: 2005/0087124 (2005-04-01), Dwilinski et al.
patent: 2005/0249255 (2005-11-01), Dwilinski et al.
patent: 2006/0032428 (2006-02-01), Dwilinski et al.
patent: 2006/0054075 (2006-03-01), Dwilinski et al.
patent: 2006/0054076 (2006-03-01), Dwilinski et al.
patent: 2006/0057749 (2006-03-01), Dwilinski et al.
patent: 2006/0124051 (2006-06-01), Yoshioka et al.
patent: 2006/0138431 (2006-06-01), Dwilinski et al.
patent: 2006/0177362 (2006-08-01), D'Evelyn et al.
patent: 2006/0191472 (2006-08-01), Dwilinski et al.
patent: 2007/0234946 (2007-10-01), Hashimoto et al.
patent: 2008/0050855 (2008-02-01), Dwilinski et al.
patent: 2008/0067523 (2008-03-01), Dwilinski et al.
patent: 2008/0102016 (2008-05-01), Hashimoto
patent: 2008/0108162 (2008-05-01), Dwilinski et al.
patent: 2008/0156254 (2008-07-01), Dwilinski et al.
patent: 2008/0303032 (2008-12-01), Dwilinski et al.
patent: 2009/0072352 (2009-03-01), Hashimoto et al.
patent: 1036414 (1989-10-01), None
patent: 1289867 (2001-04-01), None
patent: 1065289 (2001-05-01), None
patent: 1260409 (2006-06-01), None
patent: 0 716 457 (1996-06-01), None
patent: 0 711 853 (1999-09-01), None
patent: 0 949 731 (1999-10-01), None
patent: 0 973 207 (2000-01-01), None
patent: 1 088 914 (2001-04-01), None
patent: 1 164 210 (2001-12-01), None
patent: 1 405 936 (2004-04-01), None
patent: 1514958 (2005-03-01), None
patent: 1 616 981 (2006-01-01), None
patent: 1770189 (2007-04-01), None
patent: 2796657 (2001-01-01), None
patent: 2326160 (1998-12-01), None
patent: 2 333 52
Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek
Ammono Sp. z o.o.
Kunemund Robert M
Morrison & Foerster / LLP
Nichia Corporation
Song Matthew J
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