Process for obtaining bulk mono-crystalline...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S081000, C117S083000, C117S937000

Reexamination Certificate

active

07314517

ABSTRACT:
An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0≦×<1 in an environment of supercritical ammonia-containing solution has been now proposed. According to the invention growth rate and quality of the product obtained can be controlled by suitable selection of mineralizer, so as to ensure presence of ions of Group I element (IUPAC 1989), preferably sodium in combination with other components selected from the group consisting of Group I elements (IUPAC 1989), ions of Group II elements (IUPAC 1989), one or more substances containing oxygen-free species causing some weakening of the ammono-basic nature of the supereritical solvent, optionally in combination with Group II elements (JUPAC 1989), preferably calcium or magnesium.

REFERENCES:
patent: 2796657 (2001-01-01), None
patent: WO97/13891 (1997-04-01), None
patent: WO02/101120 (2002-12-01), None
patent: WO03/035945 (2003-05-01), None
L. Liu et al.; “Substrates for gallium nitride epitaxy” Materials Science and Engineering R 37, Apr. 30, 2002, pp. 61-127.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for obtaining bulk mono-crystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for obtaining bulk mono-crystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for obtaining bulk mono-crystalline... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2792300

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.