Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2008-01-01
2008-01-01
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S081000, C117S083000, C117S937000
Reexamination Certificate
active
07314517
ABSTRACT:
An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0≦×<1 in an environment of supercritical ammonia-containing solution has been now proposed. According to the invention growth rate and quality of the product obtained can be controlled by suitable selection of mineralizer, so as to ensure presence of ions of Group I element (IUPAC 1989), preferably sodium in combination with other components selected from the group consisting of Group I elements (IUPAC 1989), ions of Group II elements (IUPAC 1989), one or more substances containing oxygen-free species causing some weakening of the ammono-basic nature of the supereritical solvent, optionally in combination with Group II elements (JUPAC 1989), preferably calcium or magnesium.
REFERENCES:
patent: 2796657 (2001-01-01), None
patent: WO97/13891 (1997-04-01), None
patent: WO02/101120 (2002-12-01), None
patent: WO03/035945 (2003-05-01), None
L. Liu et al.; “Substrates for gallium nitride epitaxy” Materials Science and Engineering R 37, Apr. 30, 2002, pp. 61-127.
Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek
Ammono Sp. Z.O.O.
Hiteshew Felisa
Nichia Corporation
Westerman, Hattori, Daniels & Adrian , LLP.
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