Fishing – trapping – and vermin destroying
Patent
1990-04-10
1991-10-22
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437937, H01L 21324
Patent
active
050595512
DESCRIPTION:
BRIEF SUMMARY
The present invention relates to a process for neutralizing acceptor atoms in p-type InP using a hydrogen plasma or optionally deuterium or hydrogenated compounds.
It more particularly applies to the production of ultra-fast semiconductor components for use in microelectronics and at ultrahigh frequencies and more particularly for producing photodiodes on InP, or in optoelectronics for producing lasers emitting at 1.3 to 1.5 .mu.m. In more general terms, the invention applies to all semiconductor devices where an electrical insulation is desired.
For some time now, interest has been attached to electrical neutralization by hydrogen of doping atoms (donors or acceptors) of semiconductor materials such as silicon, germanium, GaAs, GaAlAs, CdTe or ZnTe. In particular, the neutralization of donor atoms in GaAs by atomic hydrogen is described in the article in Appl. Phys. Lett. 47 (2), July 1985 by J. Chevallier et al "Donor Neutralization in GaAs(Si) by Atomic Hydrogen", pp.108-110 and in the article in J. Appl. Phys. 59(11) of June 1986 by A. Jalil et al "Electron Mobility Studies of the Donor Neutralization by Atomic Hydrogen in GaAs Doped with Silicon", pp.3774-3777.
However, hitherto nobody has been able to neutralize acceptor atoms in InP using a hydrogen plasma. Thus, the action of a hydrogen plasma on InP leads to a serious deterioration of the semiconductor surface due to the reaction of the phosphorus with the highly active hydrogenated species leading to the formation of phosphine and the appearance of indium droplets. It is also necessary to protect the surface of said semiconductor material when it is exposed to a hydrogen plasma.
The invention therefore relates to a process for neutralizing acceptor atoms in type p InP by a hydrogen plasma using a layer protecting the substrate surface. U.S. Pat. No. A-4 610 731 describes the deterioration of the InP surface subject to the action of a hydrogen plasma and therefore the need for providing a protective material thereon. It also teaches the deterioration of GaInAs under the same conditions.
However, the inventor has surprisingly found that, under certain conditions, a GaInAs layer could protect InP.
The invention therefore relates to a process for neutralizing acceptor atoms in a p-type InP material, essentially consisting of depositing a not intentionally doped Ga.sub.x In.sub.1-x As layer, in good crystal lattice agreement with InP, x being a number at the most equal to 1, followed by hydrogenating or deuterating the material by subjecting the assembly to a plasma of hydrogen, deuterium or a hydrogenated compound having a power density below 0.07 W/cm.sup.2 for temperatures at the most equal to 250.degree. C.
This GaInAs layer is permeable to atomic deuterium or hydrogen. In addition, no GaInAs surface deterioration can be observed under an optical microscope with a magnification of 1000, the surface remaining specular.
The non-deterioration of the GaInAs surface is due to the inventive use of a plasma having a power density below 0.07 W/cm.sup.2. Thus, the inventors have found after a considerable amount of research that a power density above 0.07 W/cm.sup.2 at the most 250.degree. C. led to a GaInAs surface deterioration, which is the case in the aforementioned U.S. Pat. No. A-4 610 731, where the power density is 0.08 W/cm.sup.2 and that this deterioration did not occur in the case of a power density below said value.
Preferably, the power density is 0.025 W/cm.sup.2. Such a power density is adequate for hydrogenating InP through the GaInAs layer and without deteriorating the two semiconductor materials, whereas the same value automatically leads to an InP deterioration when the latter is not protected.
In order to avoid the accumulation of hydrogen or deuterium at the GaInAs/InP interface, it is necessary to use materials having a good lattice agreement. For this purpose, it is desirable for the .DELTA.a/a ratio, a being the InP lattice parameter, to be as low as possible and e.g. equal to 5.multidot.10.sup.-4, which corresponds to a composition
REFERENCES:
patent: 4610731 (1986-09-01), Chevallier
patent: 4936781 (1990-06-01), Mircea et al.
Le Vide, les Couches Minces, vol. 41, No. 231, Mar.-Apr. 1986, F. Proix. et al., "Interactions Comparees de L'Hydrogene Atomique et de L'Hydrogene Ionise Avec Gaas et InP Clives", pp. 189-190.
Extended Abstracts, vol. 85, No. 2, The Electrochemical Society, C. Santinelli et al., "Physico-Chemical and Elecrical Arsenic-Stabilization of InP Surface for M.I.S. Device Applications", p. 285.
Semiconductor Science & Technology, vol. 4, No. 2, Feb. 1989, IOP Publishing Ltd., J. Chevallier et al., "Hydrogen Passivation of Shallow Acceptors in p-Type InP", pp. 87-90.
Benoir Rose
Chevallier Jacques
Mircea Andrei
Pesant Jean-Claude
Chaudhuri Olik
Etat Francais, represente par le Ministre Delegue des Postes,
Ojan Ourmazd S.
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