Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2003-04-22
2008-10-21
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S414000, C257SE51040, C438S049000, C977S746000, C977S847000, C977S938000, C977S957000
Reexamination Certificate
active
07439562
ABSTRACT:
The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2and R3are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2and R3being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.
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Auvray et al., Carbon nanotube transistor optimization by chemical control of the nanotube-metal interface, Jun. 21, 2004, Appl. Phys. Lett., vol. 84, No. 25, pp. 5106-5108.
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Auvray Stéphane
Bourgoin Jean-Philippe
Derycke Vincent
Goffman Marcelo
Alston & Bird LLP
Commissariat a l''Energie Atomique
Elms Richard T.
Lulis Michael
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