Abrading – Abrading process – Glass or stone abrading
Reexamination Certificate
1999-08-02
2001-10-16
Young, Lee (Department: 3729)
Abrading
Abrading process
Glass or stone abrading
C451S036000, C451S037000, C451S028000, C438S693000, C051S308000
Reexamination Certificate
active
06302765
ABSTRACT:
The present invention relates to a process for mechanical chemical polishing of a layer in copper-based material, in particular for the formation of interconnecting tracks of integrated circuits.
The interconnecting tracks of semi-conductors are usually made from an aluminium film approximately 1 &mgr;m thick by lithography, then by reactive ionic etching (RIE). They are subsequently encapsulated in a dielectric layer, most often based on silicon oxide, obtained for example by decomposition in the vapour phase of tetraethylorthosilicate (TEOS).
The increase in the number of transistors per unit area, also called the integration density, necessitates the reduction of the width of the interconnecting tracks. This results in an increase in the electrical resistance of these interconnecting tracks as well as electromigration phenomena.
An advantage of copper over aluminium is that it gives a better resistance to electromigration. Moreover, its specific resistance is lower than that of aluminium. It thus appears to constitute an advantageous replacement for aluminium as a constituent of interconnecting tracks of integrated circuits.
Currently, it is difficult to etch the interconnecting tracks in copper by reactive ionic etching (RIE).
The damascene process is currently the best alternative known for defining interconnecting tracks in copper. The damascene process consists of depositing a silicon oxide based dielectric layer on a substrate. This dielectric layer can be obtained, for example, by the decomposition of TEOS in vapour phase. In general, the dielectric layer has a thickness of approximately 2 &mgr;m. The design of the interconnecting circuit is then transferred onto this dielectric layer by photolithography and then by reactive ionic etching (RIE). In general, this is etched such that trenches of a depth of approximately one &mgr;m are formed.
Subsequently, a diffusion barrier approximately 100 nm thick is generally deposited on the dielectric layer. This diffusion barrier prevents the diffusion of copper in the dielectric material. The diffusion barrier is usually composed of titanium or titanium nitride (TiN). A layer in a copper-based material approximately 2 &mgr;m thick is then deposited. The copper-based material can be elemental copper or copper alloys, in particular Cu—Si, Cu—Al, Cu—Si—Al or Cu—Ag.
The copper-based material must be polished by mechanical chemical polishing until the surface of the silicon oxide-based dielectric layer is reached. The copper-based material thus only remains in the trenches.
The damascene process is illustrated by
FIGS. 1 and 2
. More particularly,
FIG. 1
represents a transverse section of an interconnecting track of an integrated circuit before mechanical chemical polishing. This transverse section includes a layer
1
in a dielectric material in which a trench
4
is etched. A layer
2
constituting a diffusion barrier is deposited on the layer
1
, this layer
2
being itself covered by a layer
3
in a copper-based material.
FIG. 2
represents a transverse section of an interconnecting track of the same integrated circuit after mechanical chemical polishing, the latter having been carried out in an ideal manner.
To carry out mechanical chemical polishing of the copper-based layer, two phenomena must be avoided:
an attack on the subjacent silicon oxide layer generally referred to as an erosion phenomenon. The consequence of this is the introduction locally of ridges, which is counter-productive to the desired planarization.
an over-polishing of the interconnecting tracks in the trenches generally referred to as a “dishing” phenomenon. This phenomenon also leads to the introduction of ridges and moreover, reduces the thickness of the interconnecting tracks and, as a result of this, reduces their conductance.
The two phenomena mentioned above are illustrated by
FIGS. 3 and 4
. More particularly,
FIG. 3
represents a transverse section of an interconnecting track of the integrated circuit illustrated in
FIG. 1
after polishing having led to an erosion phenomenon.
FIG. 4
represents a transverse section of an interconnecting track of the integrated circuit illustrated in
FIG. 1
after polishing having led to a dishing phenomenon.
The two phenomena of erosion and dishing are principally due to a poor uniformity of polishing of the copper-based material. In fact, an imperfect elimination of the copper-based layer necessitates a significant over-polishing to avoid all risk of electric continuity between the electronic devices. This results in an over-polishing of the interconnecting tracks and the dielectric areas already uncovered.
In the patent U.S. Pat. No. 5.622.525, a process is proposed for polishing surfaces in copper or alloys mainly containing copper using a polishing composition comprising a suspension of colloidal silica particles in an alkaline solution, demineralized water and a chemical activator. The silica particles have an average diameter comprised between 20 and 50 nm.
The patent U.S. Pat. No. 5,575,885 describes a polishing solution for a copper or copper alloy film comprising an organic acid chosen from aminoacetic acid and aminosulphuric acid, an oxidant like hydrogen peroxide or sodium hypochlorite, and water. The polishing solution can in addition comprise abrasive grains chosen from silica, zircon, cerium and aluminium oxide. These abrasive grains have an average grain size comprised between 20 and 100 nm. The alkaline solution has a neutral pH or preferably an alkaline pH comprised between 9 and 14.
Another copper or copper-based alloy polishing composition was described in the patent application EP-A-0 747 939. This polishing composition comprises water-soluble organic acids capable of forming complexes with copper, abrasive polishing grains and water. The abrasive grains are chosen from the group constituted by silica, zircon, cerium and aluminium oxide. The average diameter of these grains is comprised between 20 and 100 nm.
The copper or copper-alloy polishing processes currently lead to a poor polishing uniformity, particularly with the basic abrasives generally used.
A first subject of the invention thus consists of a mechanical chemical polishing process which allows a homogeneous and regular elimination of a copper-based material.
Another subject of the invention consists of a process for forming interconnections in a copper-based material in integrated circuits, avoiding the phenomena of dishing or erosion.
Yet another subject of the invention consists of the use of a colloidal silica based polishing composition for polishing a copper-based material.
Thus, the invention relates to a process for mechanical chemical polishing of a layer of copper-based material by a polishing composition, characterized in that said polishing composition comprises an aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds the average diameter of which is comprised between 10 and 100 nm, preferably between 25 and 50 nm, the pH of this aqueous suspension being comprised between 1 and 5.
It was noted by the inventors that the application of a polishing composition comprising colloidal silica particles not linked to each other by siloxane bonds and the average diameter of which is comprised between 10 and 100 nm, preferably between 25 and 50 nm and the pH of which is comprised between 1 and 5, allows an excellent compromise to be obtained between the polishing speed of the copper layer, the percentage uniformity of polishing and a satisfactory surface state.
The acid aqueous suspensions of colloidal silica used in the process of the invention can be obtained either from alkaline silicates, in particular sodium or potassium silicates, or from ethyl silicate. Such processes are more particularly described in K. K. Iler, “The Chemistry of Silica”, ch.
9
, pp. 331-343, Ed. Wiley Interscience, 1979. The colloidal silica particles obtained according to this process are present in the form of individualized particles not linked to each other by siloxane bonds.
The pH of th
Jacquinot Eric
Letourneau Pascal
Rivoire Maurice
Browdy and Neimark
Clariant (France) S.A.
Trinh Minh
Young Lee
LandOfFree
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