Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Patent
1998-02-26
2000-04-11
Niebling, John F.
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
438 16, 438 29, H01L 2100
Patent
active
060487429
ABSTRACT:
The invention works by taking optical reflectance measurements on the deposited layers at different wavelengths and fitting the measured results to extract the thicknesses and compositions. The process of the present invention simultaneously measures the thicknesses of elemental and binary semiconductors' layers and the thicknesses and composition of ternary layers. Highly precise thickness and composition estimates and wafer maps of the growth rates and composition are provided by (1) measuring in a wavelength range at which the index of refractions are rapidly varying and (2) growing a special high reflectance test structure consisting of alternating layers of the materials to be measured.
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patent: 5443684 (1995-08-01), Eckart et al.
patent: 5835226 (1998-11-01), Berman et al.
H.A. MacLeod, Thin-Film Optical Filters (American Elsevier Publishing Company, New York, 1969) pp. 94 to 100.
Q.S. Paduano, D.W. Weyburne, F. Lu and R. Bhat, J. Elec. Mat., 24, 1659 (1995).
Paduano Qing S.
Weyburne David W.
Collier Stanton E.
Murphy John
Niebling John F.
The United States of America as represented by the Secretary of
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