Process for manufacturing wafers of semiconductor material...

Details Process for manufacturing wafers of semiconductor material... Process for manufacturing wafers of semiconductor material...

2005-09-13

2008-03-25

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Having enclosed cavity

C438S458000, C438S526000, C438S715000, C257SE21568, C257SE21570

Reexamination Certificate

active

07348257

ABSTRACT:
A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is formed on top of the substrate so as to close the deep trench at the top and form at least one buried cavity. The top layer of the second wafer is bonded to the first wafer through the bonding layer. The two wafers are subjected to a thermal treatment that causes bonding of at least one portion of the top layer to the first wafer and widening of the buried cavity. In this way, the portion of the top layer bonded to the first wafer is separated from the rest of the second wafer, to form a composite wafer.

REFERENCES:
patent: 2004/0142542 (2004-07-01), Murphy et al.
patent: 1 043 770 (2000-10-01), None
patent: 1 427 010 (2004-06-01), None
Sato, T., et al., “A New Substrate Engineering for the Formation of Empty Space in Silicon (ESS) Induced by Silicon Surface Migration,”IEDM 1999, pp. 517-520.

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