Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-01-28
1999-11-16
Graybill, David E.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 39, 372 45, 372 96, 257 98, H01L 3300, H01S 308, H01S 319
Patent
active
059856866
ABSTRACT:
In the fabrication of vertical cavity surface emitting lasers, patterned wafer fusion promotes low-loss refractive index guiding combined with a mechanically robust and reproducibly fabricatable structure. A fabricated laterally refractive index guided VCSEL includes a plurality of layers of semiconductor, including a bottom mirror stack disposed above a semiconductor substrate, an active region having upper and lower claddings sandwiching a layer of quantum wells disposed above the bottom mirror stack, and a top mirror stack disposed above the active region. A recessed pattern is etched in one of the plurality of layers to create a mode confining layer, prior to wafer fusion, which forms a buried air gap subsequent to wafer fusion. The buried air gap provides a lateral refractive index profile, which functions as a low-loss means for index guiding the VCSEL optical energy to the single fundamental transverse mode.
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Genco, Jr. Victor M.
Graybill David E.
W. L. Gore & Associates, Inc.
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