Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-08-16
2011-08-16
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021, C257S690000, C257S738000, C257S779000, C438S613000, C174S262000, C174S263000
Reexamination Certificate
active
07999380
ABSTRACT:
A process for manufacturing a substrate with bumps is provided. First, a metallic substrate having a body and a plurality of conductive elements is provided. Next, a first dielectric layer is formed on the body, and the conductive elements are covered by the first dielectric layer. Then, a plurality of circuits and a plurality of contacts are formed on a surface of the first dielectric layer, and the contacts are electrically connected to the conductive elements. Next, a second dielectric layer is formed on the surface of the first dielectric layer, and the circuits are covered by the second dielectric layer. Finally, the body is patterned to form a plurality of bumps, and the bumps are electrically connected to the contacts by the conductive elements. The bumps are formed by etching the body, so the connection reliability between bumps and conductive elements is desirable, and the manufacturing cost is reduced.
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Advanced Semiconductor Engineering Inc.
Chu Chris
J.C. Patents
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