Process for manufacturing Si useful for semiconductor components

Details Process for manufacturing Si useful for semiconductor components Process for manufacturing Si useful for semiconductor components

1980-10-06

1981-10-13

Peters, G. O.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423340, C01B 3302

Patent

active

042948118

ABSTRACT:
Relatively pure Si (having less than about 1 ppm of detrimental impurities therein) is obtained from ordinary quartz sand by uniformly admixing such sand with suitable glass-forming materials, such as boron oxide and alkali-metal carbonates or oxides, melting such admixture to form a glass, annealing the glass so as to obtain a phase separation comprised of an SiO.sub.2 -- rich phase and an impurity-rich phase, extracting the impurity-rich phase via strong acid, such as nitric acid, washing and drying the remaining glass and reducing such glass with carbon-containing compounds, such as graphite, sucrose, starch, etc., in an electric arc. The so-obtained relatively pure silicon is suitable for fabrication into semiconductor components, such as solar cells.

REFERENCES:
patent: 2215039 (1940-09-01), Hood et al.
patent: 3650721 (1972-03-01), Hammel et al.
patent: 4097584 (1978-06-01), Reuschel et al.
patent: 4247528 (1981-01-01), Dosaj et al.

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