Process for manufacturing semiconductor laser having low oscilla

Details Process for manufacturing semiconductor laser having low oscilla Process for manufacturing semiconductor laser having low oscilla

1993-01-14

1994-04-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, H01L 21205

Patent

active

053045076

ABSTRACT:
In a first crystal growth process for manufacturing a semiconductor laser, an n-(Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P clad layer, an undoped (Al.sub.z Ga.sub.1-z).sub.0.5 In.sub.0.5 P active layer, a p-(Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P clad layer, a p-Ga.sub.0.5 In.sub.0.5 P layer, and an n-type semiconductor layer, are sequentially stacked in the named order on an upper surface of a GaAs substrate. Thereafter, the n-type semiconductor layer is removed, and the p-Ga.sub.0.5 In.sub.0.5 P layer and the p-(Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P clad layer are selectively removed so as to form a ridge stripe. A current block layer is formed on the p-(Al.sub.y Ga.sub.-y).sub.0.5 In.sub.0.5 P clad layer at both sides of the ridge stripe, and a p-GaAs contact layer is formed on the ridge stripe and the current block layer. With this process, since the n-type semiconductor layer is formed to cover the p-Ga.sub.0.5 In.sub.0.5 P layer in the first crystal growth process, the saturated concentration of the doping characteristics of the p-Ga.sub.0.5 In.sub.0.5 P layer becomes high, and accordingly, confinement of injected carriers within the active layer in the doubleheterojunction structure is improved, so that an electron overflow from the active layer is reduced, and therefore, the oscillation threshold current becomes low.

REFERENCES:
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patent: 5189680 (1993-02-01), Kimura
H. Hamada, et al "AlGaInP Visible Laser Diodes Grown on Misoriented Substrates" IEEE Journal of Quantum Electronics vol. 27, No. 6, Jun. 1991 pp. 1483-1490.
Article No. 27p-R-12 in 1990 Autumn Meeting Transactions of the Japan Society of Applied Physics, p. 941.

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