Process for manufacturing semiconductor integrated circuit devic

Details Process for manufacturing semiconductor integrated circuit devic Process for manufacturing semiconductor integrated circuit devic

1998-06-03

2000-05-23

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

438655, 423248, H01L 2100, B01J 804

Patent

active

060665084

ABSTRACT:
In a gas-phase treating process of a semiconductor wafer using hydrogen, there is provided a technique for safely eliminating the hydrogen in an exhaust gas discharged from a gas-phase treating apparatus. The profile at the end portions of the side walls of gate electrodes of a poly-metal structure is improved by forming the gate electrodes over a semiconductor wafer IA having a gate oxide film and then by supplying the semiconductor wafer 1A with a hydrogen gas containing a low concentration of water, as generated from hydrogen and oxygen by catalytic action, to oxidize the principal face of the semiconductor wafer 1A selectively. After this, the hydrogen in the exhaust gas, as discharged from an oxidizing furnace, is completely converted into water by causing it to react with oxygen by a catalytic method.

REFERENCES:
patent: 4356622 (1982-11-01), Widmann
patent: 4505028 (1985-03-01), Kobayashi
patent: 5063168 (1991-11-01), Vora
patent: 5088314 (1992-02-01), Takashi
patent: 5202096 (1993-04-01), Jain
patent: 5576228 (1996-11-01), Chen et al.

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