Process for manufacturing semiconductor integrated circuit devic

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430311, 430313, 430314, 430319, G03F 900

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active

055210333

ABSTRACT:
Herein disclosed is a technology for improving the accuracy of transfer of a circuit pattern in a manufacture process of a semiconductor integrated circuit or the like by solving problems in the manufacture of a phase shifter mask for a phase shift exposure when in the transfer.
Disclosed is an exposure method of improving the transfer accuracy of the circuit pattern in the manufacture process of a semiconductor integrated circuit or the like by exposing the mask having first and second overlapped masks, when an object is to be irradiated with the light having transmitted through the mask, to invert the optical phase of the light having transmitted through a transmissive region of the first mask.
Also disclosed is an exposure method, by which a sample is irradiated with a light having transmitted through a mask formed with a predetermined pattern having a shielding region and a transmissive region, to transfer the pattern of the mask to the sample, wherein the improvement resides: in that the mask includes a first mask and a second mask; in that the first mask is formed with a pattern having a shielding region and a transparent region; in that the second mask is formed with a pattern having a phase shifter for establishing a phase difference in the transmission light; and in that the first mask and the second mask are overlapped on the sample to establish a phase difference in the light having transmitted through the first mask, so that a clear image may be focused on the sample by making use of the interference of the transmission light.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5248575 (1993-09-01), Ogashi
patent: 5418092 (1995-05-01), Okamoto

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