Process for manufacturing semiconductor devices

Details Process for manufacturing semiconductor devices Process for manufacturing semiconductor devices

1992-03-06

1994-08-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437 60, 437235, 437919, 148DIG117, H01L 2144

Patent

active

053366387

ABSTRACT:
Herein disclosed is a process for manufacturing a semiconductor device, which comprises: a step of forming a first electrode composed of tantalum and tungsten over a semiconductor substrate; a step of depositing a dielectric film of tantalum oxide on the first electrode; a step of oxidizing the first electrode and the dielectric film of tantalum oxide; and a step of forming a second electrode over the dielectric film.

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Oehrlein et al.; "Electrical properties of amorphous tantalum pentoxide thin films on silicon"; pp. 6502-6508 of American Institute of Physics; Journal of Applied Physics 54(11); Nov. 1983.
Kawamoto et al.; "A 1.28 .mu.m.sup.2 Bit-Line Shielded Mem. Cell Technology for 64 Mb Drams"; pp. 13-14 of IEEE; Symposium on VLSI Tech.; 1990.
Nishioka et al.; "Application of high dielectric constant insulation film Ta.sub.2 O.sub.5 to VSLIs"; pp. 1622-1628 of App. Phys. Association of Applied Physics 58(11); Aug. 1989.

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