Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1995-09-25
1998-12-01
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257737, 257738, 257786, H01L 23544
Patent
active
058443045
ABSTRACT:
A process for manufacturing a semiconductor device includes defining chip sections on a wafer by scribe lines with each chip section having chip electrodes formed thereon. The wafer is covered with a passivating film except for on the chip electrodes. Aluminum interconnection layers are provided such that each layer is connected to the chip electrode at one end thereof and the other end of the layer is extended towards the central portion of the chip section. A cover coating film is applied on the passivating film and the layers. A number of apertures are formed in the coating film passing therethrough, and bump electrodes are formed at the position corresponding to the apertures. The chip sections are then separated from each other along the scribe lines into semiconductor devices.
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R. Chanchani et al.; "A New mini Ball Grid Array (mBGA) Multichip Module Technology"; International Journal of Microcircuits & Electronic Packaging, 18(1995) Third Quarter, No. 3, Reston, VA, pp. 185-192., Dec. 1995.
Chikaki Shinichi
Kata Keiichiro
NEC Corporation
Prenty Mark V.
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