Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as
Patent
1997-09-03
1999-11-02
Koslow, C. Melissa
Compositions
Barrier layer device compositions
Group iii element containing binary compound; e.g., ga, as
423413, 501 40, 501 961, 501 964, 501 984, 438 96, H01L 2710
Patent
active
059763981
ABSTRACT:
A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element separately from and at the same time as the first plasma; adding the vaporized metal organic compound and the plasma of the auxiliary material to the plasma of the V group element; and forming, on a substrate, a film of a semiconductor compound containing the III group element and the V group element. A semiconductor and a semiconductor device having high quality and high functions can be manufactured in a short time at high yield. An amorphous material includes at least hydrogen, a III Group element, preferably gallium, and nitrogen. In the infrared absorption spectrum measured of the amorphous material, the ratio of the absorbance I.sub.N-H, at the absorption peak indicating the bond (N--H) between nitrogen and hydrogen to that, I.sub.C-H, at the absorption peak indicating the bond (C--H) between carbon and hydrogen is 2 or more; and the ratio of the absorbance, I.sub.N-H, at the absorption peak indicating the bond (N--H) between nitrogen and hydrogen to the absorbance, I.sub.III-H, at the absorption peak indicating the bond (III-H) between the III Group element and hydrogen is 0.2 or more.
REFERENCES:
A. Yoshida, "Fabrication and characterization of InN and InAIN crystalline thin films by microwave-excited metalorganic vapor phase epitaxy", New Functionallity Materials, vol. C. 183-188 (1993).
S. Zembutsu et. al., "Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy", App. Phys. Lett. 48, 870-872 (Mar. 31, 1986).
H. Reuter et. al., "Properties of sputtered amorphous and microcrystalline GaAs films", Thin Solid Films, vol. 254, pp. 96-102 (1995).
M. Onuki et. al., "Time-of-Flight Measurement of Hydrogenated Amorphous GaP", Journal of Non-Crystalline Solids, 114 pp. 792-794 (1989).
U. Coscia et. al., "Photoconductivity of amorphous GaAs", Journal of Non-Crystalline Solids, 194 pp. 103-108 (1996).
J. Kouvetakis and D. B. Beach, "Chemical Vapor Deposition of Gallium Nitride from Diethylgallium Azide", Chemistry of Materials 1, 476-478 (1989).
Wang et al, "Infrared and Morphological Studies of Hydrogenated AIN Thin Films", Langmuir, vol. 8, pp. 1347-53, 1992 no month.
Fuji 'Xerox Co., Ltd.
Koslow C. Melissa
LandOfFree
Process for manufacturing semiconductor, apparatus for manufactu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for manufacturing semiconductor, apparatus for manufactu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing semiconductor, apparatus for manufactu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2130488