Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-12-25
2007-12-25
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S093000, C117S094000, C117S095000
Reexamination Certificate
active
10926057
ABSTRACT:
A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.
REFERENCES:
patent: 6844074 (2005-01-01), Takahashi et al.
Kubo Yoshinori
Nakamura Takato
Nonaka Satoshi
Shinriki Yoichi
Takahashi Naoyuki
Chaet Marissa W
Costellia Jeffrey L.
Humo Laboratory, Ltd
Kunemund Robert
Nixon & Peabody LLP
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