Process for manufacturing pure polycrystalline silicon

Details Process for manufacturing pure polycrystalline silicon Process for manufacturing pure polycrystalline silicon

1978-04-24

1979-10-09

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

423349, 423350, 427 95, 427248R, 427248B, C01B 3300, C01B 3302

Patent

active

041706676

ABSTRACT:
A process for the production of high purity polycrystalline silicon from a mixture of silicon tetrachloride and trichlorosilane. Such a mixture can be used for the rapid deposition of polycrystalline silicon while, at the same time, producing an excess of trichlorosilane in exhaust gases from the reaction. The process permits the modification of the reactor design for the economical and energy conscious production of polycrystalline silicon.

REFERENCES:
patent: 3540871 (1970-11-01), Dyer
patent: 3734770 (1973-05-01), Price et al.
patent: 3865647 (1975-02-01), Reuschel
patent: 3900660 (1975-08-01), Bradley
patent: 3933985 (1976-01-01), Rogers
patent: 3963838 (1976-06-01), Setty et al.

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