Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2006-11-28
2010-11-16
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C438S473000, C438S106000, C438S118000, C438S119000, C438S125000
Reexamination Certificate
active
07833880
ABSTRACT:
A process is provided for manufacturing micromechanical devices formed by joining two parts together by direct bonding. One of the parts (12) is made of silicon and the other one is made of a material chosen between silicon and a semiconductor ceramic or oxidic material. The joint between the two parts forms a cavity (14) containing the functional elements of the device (11), possible auxiliary elements and a getter material deposit (13).
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Kusumakar Karen M
Nguyen Ha Tran T
Panitch Schwarze Belisario & Nadel LLP
Saes Getters S.p.A.
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