Process for manufacturing light valve device using semiconductiv

Details Process for manufacturing light valve device using semiconductiv Process for manufacturing light valve device using semiconductiv

1995-06-02

1998-03-17

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 40, 437 86, 437974, 148DIG12, 148DIG135, H01L 2184

Patent

active

057285918

ABSTRACT:
A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

REFERENCES:
patent: 4024626 (1977-05-01), Leupp et al.
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4838654 (1989-06-01), Hamaguchi et al.
patent: 4885616 (1989-12-01), Ohta
patent: 4906587 (1990-03-01), Blake
patent: 4968638 (1990-11-01), Wright et al.
patent: 4980308 (1990-12-01), Hayashi et al.
patent: 4984033 (1991-01-01), Ishizu et al.
patent: 5110748 (1992-05-01), Sarma
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5256562 (1993-10-01), Vu et al.
patent: 5300788 (1994-04-01), Fan et al.
S. Takahashi, et al., IEEE Conf. Proc. '90, p. 147, ". . . SOI Devices Obtained by Device Transfer Method", 1990.
K. Sumiyoshi, et al., IEDM '89, p. 165, "Device Layer Transferred Poly Si TFT Array for HRLC Projector", 1989.
IEEE Transactions On Electron Devices, vol. 37, No. 1, Jan. 1990, pp. 121-127, "A Laser-Recrystallization . . . LCD's".
Japanese Journal of Applied Physics, vol. 29, No. 4, part 2, Apr. 1990, pp. L521-L523, "Experimental Fabrication . . . Silicon Films".
Fujitsu Scientific and Technical Journal, vol. 24, No. 4+index, Dec. 1988, pp. 408-417, "SOI-Device on Bonded Wafer".
Journal of the Electromechanical Society, vol. 120, No. 11, Nov. 1973, pp. 1563-1566, "Thin Silicon Film on Insulating Substrate".

Affiliated with

Also associated with

Rating

Process for manufacturing light valve device using semiconductiv does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing light valve device using semiconductiv, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing light valve device using semiconductiv will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957020