Process for manufacturing isolated semiconductor components in a

Fishing – trapping – and vermin destroying

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437 90, 437 91, 437 92, H01L 2176

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053875370

ABSTRACT:
A process for manufacturing isolated semiconductor components in a semiconductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is recrystallized so as to become monocrystalline silicon by thermal heating from the "nucleus" formed by the underlying silicon in said opening.

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Solid State Technology Aug. 1985 pp. 141-148 "Advanced Dielectric Isolation through Selective Epitaxial Growth Techniques" by John O. Borland et al, Sep. 1982.

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