Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Patent
1995-01-30
1997-05-20
Niebling, John
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
438268, 438273, H01L 2133, H01L 21336
Patent
active
056311770
ABSTRACT:
A manufacturing process for an integrated circuit which includes at least one vertical-current-flow MOS transistor. The patterned photoresist which screens the body implant is also used to mask the etching of a nitride layer over a pad oxide. After the photoresist is cleared, the nitride pattern is transferred into the oxide, and the resulting oxide
itride stack is used to mask the source implant. The nitride/oxide stack is then removed, the gate oxide is grown, and the gate layer is then deposited.
REFERENCES:
patent: 4757032 (1988-07-01), Contiero
patent: 4890142 (1989-12-01), Tonnel et al.
patent: 4902636 (1990-02-01), Akiyama et al.
patent: 5055895 (1991-10-01), Akiyama et al.
patent: 5077228 (1991-12-01), Eklund et al.
patent: 5273917 (1993-12-01), Sakurai
patent: 5273922 (1993-12-01), Tsoi
patent: 5306652 (1994-04-01), Kwon et al.
patent: 5376968 (1994-12-01), Yang
patent: 5475273 (1995-12-01), Paparo et al.
Wolf, S., Silicon Processing for the VLSI Era Lattice Press, Sunset Beach, CA, vol. 2, pp. 298-301.
Consorzio per la Ricerca sulla Microelecttronica nel Mezzogiorno
Formby Betty
Groover Robert
Mulpuri S.
Niebling John
LandOfFree
Process for manufacturing integrated circuit with power field ef does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for manufacturing integrated circuit with power field ef, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing integrated circuit with power field ef will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1723419