Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-04-24
1997-10-28
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257754, 437200, 437918, 437919, H01L 2900, H01L 2348, H01L 2940
Patent
active
056820607
ABSTRACT:
A method of making an integrated circuit capacitor and/or resistor and the capacitor and/or resistor wherein the method comprises providing an electrically conductive region, preferably highly doped silicon, forming a first electrode of a capacitor, forming a layer of electrically insulating material, preferably silicon oxide, silicon nitride or a combination thereof, over the surface and forming a layer of a metal silicide, preferably titanium silicide, over the layer of electrically insulating material by forming a layer of polysilicon over the layer of electrically insulating material, forming a layer of a metal, preferably titanium, which forms an electrically conductive composition when reacted with polysilicon over the layer of polysilicon, reacting the metal with the polysilicon to form an electrically conductive layer therewith and removing any unreacted metal. In accordance with a second embodiment, wherein both capacitor electrodes are accessible from one side of the capacitor, a portion of the first electrode is exposed and the layer of a metal silicide extends to and contacts the exposed portion of the first electrode. The portion of the layer of metal silicide contacting the first electrode is electrically isolated from a predetermined other portion of the layer of metal silicide which is disposed over the region to form a second electrode.
REFERENCES:
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4553050 (1985-11-01), Feinberg et al.
patent: 4914546 (1990-04-01), Alter
patent: 5037772 (1991-08-01), McDonald
patent: 5187122 (1993-02-01), Bonis
patent: 5250456 (1993-10-01), Bryant
patent: 5266156 (1993-11-01), Nasr
Dixon Robert E.
Tung Yingsheng
Brady, III W. J.
Carroll J.
Donaldson R. L.
Hashim Paul C.
Texas Instruments Incorporated
LandOfFree
Process for manufacturing integrated circuit capacitors and resi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for manufacturing integrated circuit capacitors and resi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing integrated circuit capacitors and resi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1028131