Process for manufacturing an integrated circuit with tantalum si

Details Process for manufacturing an integrated circuit with tantalum si Process for manufacturing an integrated circuit with tantalum si

1984-11-20

1986-06-10

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 148 15, 148187, 148DIG19, 148DIG147, 148DIG20, 148DIG117, 156643, 156653, 156657, 357 231, 357 239, 357 67, H01L 21283, H01L 21314

Patent

active

045934541

ABSTRACT:
The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on the sides of the grids of polycrystalline silicon and on the thick oxide and an aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.

REFERENCES:
patent: 3967371 (1976-07-01), Croset et al.
patent: 3986896 (1976-10-01), Ueno et al.
patent: 4080719 (1978-03-01), Wilting
patent: 4332839 (1982-06-01), Levinstein et al.
patent: 4384301 (1983-05-01), Tasch et al.
patent: 4432035 (1984-02-01), Hsieh et al.
patent: 4471524 (1984-09-01), Kinsbron et al.
patent: 4510670 (1985-04-01), Schwabe et al.
Saraswat et al., "Thermal Oxidation of Tantalum Silicide in O.sub.2 and Hb.2 O" Appl. Phys. Lett., 41(12) 15 Dec. 1982, pp. 1127-1129.
Jones et al., "Salicide with Buried Silicide Layer" I.B.M. Tech. Discl. Bull., vol. 27, No. 2, Jul. 1984, pp. 1044-1045.

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