Process for manufacturing an integrated bipolar power device and

Details Process for manufacturing an integrated bipolar power device and Process for manufacturing an integrated bipolar power device and

1994-05-31

1995-11-21

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 24, 437142, 437 55, H01L 2177

Patent

active

054686601

ABSTRACT:
A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable of handling high current densities. At least one second area of the device is formed with reduced minority carrier lifetimes, with a fast diode being formed in this region.

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patent: 5032540 (1991-07-01), Follegot
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